Transphorm’s industry first JEDEC qualified 600 V HEMT a bellwether for GaN

September 26, 2012 | Analyst Insight

Transphorm recently announced qualification of its gallium nitride (GaN)-on-silicon carbide (SiC) high electron mobility transistors (HEMT) by JEDEC, the global body that develops open standards in the microelectronics industry. This...

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