Transphorm releases industry's first 600 V GaN-on-silicon transistor; quells speculations about technology's future
March 14, 2013 | Analyst Insight
Ahead of the Applied Power Electronics Conference (APEC) 2013 next week, Transphorm just announced the introduction of its 600 V gallium nitride (GaN)-on-silicon transistors, qualified by JEDEC (the global...
GaN-based devices, Si substrates, Transistors (HEMT, IGBT, MOSFET)
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