Toshiba needs a strategic partner to validate SiC device performance to capture marketshare

Toshiba recently announced start of volume production of 650 V silicon carbide (SiC) Schottky barrier diodes (SBD) at its Himeji facility in Japan. The company is targeting solar photovoltaic (PV) inverter applications – with claims that its SiC diodes are 50% more efficient than comparable silic...

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