300 mm GaN-on-Si wafers on the horizon, but will it work?
June 05, 2013 | Analyst Insight
What They Said
SPTS Technologies and the Queensland Micro and Nanotechnology Facility (QMF) of Griffith University have announced the epitaxial growth of 3C silicon carbide (SiC) films on 300 mm silicon wafers....
GaN-based devices, Si substrates
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