300 mm GaN-on-Si wafers on the horizon, but will it work?

SPTS Technologies and the Queensland Micro and Nanotechnology Facility (QMF) of Griffith University have announced the epitaxial growth of 3C silicon carbide (SiC) films on 300 mm silicon wafers. QMF claimed that it has achieved SiC film thickness uniformities of around 1% on the 12-inch-diameter...

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