Fujitsu on board the GaN-on-Si train; plan to start volume production delayed to 2014

Fujitsu Semiconductor recently released its gallium nitride (GaN)-on-silicon (Si) power device with a breakdown voltage of 150 V. The company had earlier indicated that it would start volume production in the second half of 2013 – although it is now scheduled for 2014 (see the Nov. 21, 2012 LREEJ...

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