Aixtron's SiC efforts with Fraunhofer unlikely to yield results overnight
September 24, 2014 | Analyst Insight
What They Said
Aixtron recently teamed up with the Fraunhofer Institute for Integrated Systems and Device Technology (IISB) in Germany, to develop 150-mm silicon carbide (SiC) epitaxy processes using Aixtron’s G5WW vapor-phase...
Epitaxy, SiC-based devices
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