Aixtron's SiC efforts with Fraunhofer unlikely to yield results overnight

September 24, 2014 | Analyst Insight

What They Said

Aixtron recently teamed up with the Fraunhofer Institute for Integrated Systems and Device Technology (IISB) in Germany, to develop 150-mm silicon carbide (SiC) epitaxy processes using Aixtron’s G5WW vapor-phase...